| Manufacturer | |
| Mfr. Part # | STD60N3LH5-VB |
| EBEE Part # | E829779205 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 30V 25.8A 0.005Ω@10V,38.8A 3.75W 2.5V@250uA TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.3652 | $ 0.3652 |
| 10+ | $0.2867 | $ 2.8670 |
| 30+ | $0.2535 | $ 7.6050 |
| 100+ | $0.2113 | $ 21.1300 |
| 500+ | $0.1932 | $ 96.6000 |
| 1000+ | $0.1811 | $ 181.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec STD60N3LH5-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 5mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 270pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 205W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 2.201nF | |
| Output Capacitance(Coss) | 525pF | |
| Gate Charge(Qg) | 61nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.3652 | $ 0.3652 |
| 10+ | $0.2867 | $ 2.8670 |
| 30+ | $0.2535 | $ 7.6050 |
| 100+ | $0.2113 | $ 21.1300 |
| 500+ | $0.1932 | $ 96.6000 |
| 1000+ | $0.1811 | $ 181.1000 |
