15% off
| Manufacturer | |
| Mfr. Part # | STD3N62K3-VB |
| EBEE Part # | E819190245 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4738 | $ 0.4738 |
| 10+ | $0.3769 | $ 3.7690 |
| 30+ | $0.3346 | $ 10.0380 |
| 100+ | $0.2826 | $ 28.2600 |
| 500+ | $0.2594 | $ 129.7000 |
| 1000+ | $0.2458 | $ 245.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec STD3N62K3-VB | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 2.1Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 60W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 4.5A | |
| Ciss-Input Capacitance | 1.417nF | |
| Output Capacitance(Coss) | 177pF | |
| Gate Charge(Qg) | 48nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4738 | $ 0.4738 |
| 10+ | $0.3769 | $ 3.7690 |
| 30+ | $0.3346 | $ 10.0380 |
| 100+ | $0.2826 | $ 28.2600 |
| 500+ | $0.2594 | $ 129.7000 |
| 1000+ | $0.2458 | $ 245.8000 |
