15% off
| Manufacturer | |
| Mfr. Part # | STD120N4F6-VB |
| EBEE Part # | E820626314 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 40V 85A 5mΩ@10V 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5304 | $ 0.5304 |
| 10+ | $0.4265 | $ 4.2650 |
| 30+ | $0.3752 | $ 11.2560 |
| 100+ | $0.3239 | $ 32.3900 |
| 500+ | $0.2943 | $ 147.1500 |
| 1000+ | $0.2780 | $ 278.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec STD120N4F6-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 5mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 312W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 85A | |
| Ciss-Input Capacitance | 2.38nF | |
| Output Capacitance(Coss) | 550pF | |
| Gate Charge(Qg) | 120nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5304 | $ 0.5304 |
| 10+ | $0.4265 | $ 4.2650 |
| 30+ | $0.3752 | $ 11.2560 |
| 100+ | $0.3239 | $ 32.3900 |
| 500+ | $0.2943 | $ 147.1500 |
| 1000+ | $0.2780 | $ 278.0000 |
