| Manufacturer | |
| Mfr. Part # | STD100N10F7-VB |
| EBEE Part # | E87429109 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 85A 176W 4V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.9336 | $ 0.9336 |
| 10+ | $0.7510 | $ 7.5100 |
| 30+ | $0.6605 | $ 19.8150 |
| 100+ | $0.5700 | $ 57.0000 |
| 500+ | $0.5161 | $ 258.0500 |
| 1000+ | $0.4891 | $ 489.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec STD100N10F7-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 8.5mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 205pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 176W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 85A | |
| Ciss-Input Capacitance | 4nF | |
| Output Capacitance(Coss) | 565pF | |
| Gate Charge(Qg) | 160nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.9336 | $ 0.9336 |
| 10+ | $0.7510 | $ 7.5100 |
| 30+ | $0.6605 | $ 19.8150 |
| 100+ | $0.5700 | $ 57.0000 |
| 500+ | $0.5161 | $ 258.0500 |
| 1000+ | $0.4891 | $ 489.1000 |
