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VBsemi Elec SIS862DN-T1-GE3-VB


Manufacturer
Mfr. Part #
SIS862DN-T1-GE3-VB
EBEE Part #
E822396008
Package
DFN3x3-8
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
DFN-8-EP(3x3) MOSFETs ROHS
This materials supports customized cables!
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8 In Stock for Fast Shipping
8 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.7393$ 0.7393
10+$0.5960$ 5.9600
30+$0.5236$ 15.7080
100+$0.4527$ 45.2700
500+$0.4089$ 204.4500
1000+$0.3878$ 387.8000
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TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetVBsemi Elec SIS862DN-T1-GE3-VB
RoHS
TypeN-Channel
RDS(on)13mΩ@4.5V
Operating Temperature --55℃~+175℃
Reverse Transfer Capacitance (Crss@Vds)225pF
Number1 N-channel
Pd - Power Dissipation136W
Drain to Source Voltage60V
Gate Threshold Voltage (Vgs(th))3V
Current - Continuous Drain(Id)15A
Ciss-Input Capacitance2.65nF
Output Capacitance(Coss)470pF
Gate Charge(Qg)70nC@10V

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