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VBsemi Elec SI3585DV-T1-E3-VB
| Manufacturer | |
| Mfr. Part # | SI3585DV-T1-E3-VB |
| EBEE Part # | E85444644 |
| Package | TSOP-6 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 20V 5.5A 1.15W 1 N-Channel + 1 P-Channel TSOP-6 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>665 In Stock for Fast Shipping
665 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1830 | $ 0.9150 |
| 50+ | $0.1458 | $ 7.2900 |
| 150+ | $0.1297 | $ 19.4550 |
| 500+ | $0.1098 | $ 54.9000 |
| 3000+ | $0.0935 | $ 280.5000 |
| 6000+ | $0.0882 | $ 529.2000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec SI3585DV-T1-E3-VB | |
| RoHS | ||
| Type | N-Channel + P-Channel | |
| RDS(on) | 22mΩ@10V;55mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 1 N-Channel + 1 P-Channel | |
| Pd - Power Dissipation | 1.15W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 800mV | |
| Current - Continuous Drain(Id) | 5.5A;3.4A | |
| Ciss-Input Capacitance | 0.05pF | |
| Gate Charge(Qg) | 3.2nC@15V;3.6nC@15V |
Shopping Guide
Expand
665 Stock for Shipping Fast
665 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1830 | $ 0.9150 |
| 50+ | $0.1458 | $ 7.2900 |
| 150+ | $0.1297 | $ 19.4550 |
| 500+ | $0.1098 | $ 54.9000 |
| 3000+ | $0.0935 | $ 280.5000 |
| 6000+ | $0.0882 | $ 529.2000 |
Best price for more quantity?
$
