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VBsemi Elec SI2308DS-T1-GE3-VB
| Manufacturer | |
| Mfr. Part # | SI2308DS-T1-GE3-VB |
| EBEE Part # | E8558249 |
| Package | SOT-23(TO-236) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 60V 4A 1.09W 1V@250uA 1 N-channel SOT-23 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>465 In Stock for Fast Shipping
465 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2318 | $ 1.1590 |
| 50+ | $0.1870 | $ 9.3500 |
| 150+ | $0.1678 | $ 25.1700 |
| 500+ | $0.1438 | $ 71.9000 |
| 3000+ | $0.1214 | $ 364.2000 |
| 6000+ | $0.1150 | $ 690.0000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec SI2308DS-T1-GE3-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 75mΩ@10V;86mΩ@4.5V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.66W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 180pF | |
| Output Capacitance(Coss) | 22pF | |
| Gate Charge(Qg) | 4.2nC@10V;[email protected] |
Shopping Guide
Expand
465 Stock for Shipping Fast
465 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2318 | $ 1.1590 |
| 50+ | $0.1870 | $ 9.3500 |
| 150+ | $0.1678 | $ 25.1700 |
| 500+ | $0.1438 | $ 71.9000 |
| 3000+ | $0.1214 | $ 364.2000 |
| 6000+ | $0.1150 | $ 690.0000 |
Best price for more quantity?
$
