15% off
| Manufacturer | |
| Mfr. Part # | SDP10N06-VB |
| EBEE Part # | E818795006 |
| Package | TO-220AB |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 10A 1.1Ω@10V 1 N-channel TO-220 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.8813 | $ 0.8813 |
| 10+ | $0.7166 | $ 7.1660 |
| 50+ | $0.6344 | $ 31.7200 |
| 100+ | $0.5520 | $ 55.2000 |
| 500+ | $0.5035 | $ 251.7500 |
| 1000+ | $0.4778 | $ 477.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec SDP10N06-VB | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 840mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 106W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 8A | |
| Ciss-Input Capacitance | 230pF | |
| Output Capacitance(Coss) | 100pF | |
| Gate Charge(Qg) | 43nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.8813 | $ 0.8813 |
| 10+ | $0.7166 | $ 7.1660 |
| 50+ | $0.6344 | $ 31.7200 |
| 100+ | $0.5520 | $ 55.2000 |
| 500+ | $0.5035 | $ 251.7500 |
| 1000+ | $0.4778 | $ 477.8000 |
