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VBsemi Elec P2610BD-VB
| Manufacturer | |
| Mfr. Part # | P2610BD-VB |
| EBEE Part # | E819190206 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 1 N-channel TO-252 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7568 | $ 0.7568 |
| 10+ | $0.6101 | $ 6.1010 |
| 30+ | $0.5360 | $ 16.0800 |
| 100+ | $0.4634 | $ 46.3400 |
| 500+ | $0.4186 | $ 209.3000 |
| 1000+ | $0.3970 | $ 397.0000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec P2610BD-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 30mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 107W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 2.6nF | |
| Output Capacitance(Coss) | 290pF | |
| Gate Charge(Qg) | 35nC@10V |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7568 | $ 0.7568 |
| 10+ | $0.6101 | $ 6.1010 |
| 30+ | $0.5360 | $ 16.0800 |
| 100+ | $0.4634 | $ 46.3400 |
| 500+ | $0.4186 | $ 209.3000 |
| 1000+ | $0.3970 | $ 397.0000 |
