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VBsemi Elec NCE2012-VB
| Manufacturer | |
| Mfr. Part # | NCE2012-VB |
| EBEE Part # | E841370180 |
| Package | SO-8 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 20V 20A 2.5W 0.0049Ω@4.5V,10A 2.1V@250uA 1 N-channel SO-8 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6618 | $ 0.6618 |
| 200+ | $0.2651 | $ 53.0200 |
| 500+ | $0.2560 | $ 128.0000 |
| 1000+ | $0.2505 | $ 250.5000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec NCE2012-VB | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 20V | |
| Continuous Drain Current (Id) | 20A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.0049Ω@4.5V,10A | |
| Power Dissipation (Pd) | 2.5W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.1V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 315pF@10V | |
| Input Capacitance (Ciss@Vds) | 3.7nF@10V | |
| Total Gate Charge (Qg@Vgs) | 27.5nC@10V |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6618 | $ 0.6618 |
| 200+ | $0.2651 | $ 53.0200 |
| 500+ | $0.2560 | $ 128.0000 |
| 1000+ | $0.2505 | $ 250.5000 |
