15% off
| Manufacturer | |
| Mfr. Part # | MDD1902RH-VB |
| EBEE Part # | E8725109 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 40A 3.75W 1V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7463 | $ 0.7463 |
| 10+ | $0.6168 | $ 6.1680 |
| 30+ | $0.5520 | $ 16.5600 |
| 100+ | $0.4886 | $ 48.8600 |
| 500+ | $0.4009 | $ 200.4500 |
| 1000+ | $0.3806 | $ 380.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec MDD1902RH-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 30mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 3.75W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 2.6nF | |
| Output Capacitance(Coss) | 290pF | |
| Gate Charge(Qg) | 35nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7463 | $ 0.7463 |
| 10+ | $0.6168 | $ 6.1680 |
| 30+ | $0.5520 | $ 16.5600 |
| 100+ | $0.4886 | $ 48.8600 |
| 500+ | $0.4009 | $ 200.4500 |
| 1000+ | $0.3806 | $ 380.6000 |
