15% off
| Manufacturer | |
| Mfr. Part # | IRFU430APBF-VB |
| EBEE Part # | E85441231 |
| Package | TO-251 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 4.5A 9W 2V@250uA 1 N-channel TO-251 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4616 | $ 0.4616 |
| 10+ | $0.3658 | $ 3.6580 |
| 30+ | $0.3239 | $ 9.7170 |
| 80+ | $0.2727 | $ 21.8160 |
| 480+ | $0.2497 | $ 119.8560 |
| 960+ | $0.2349 | $ 225.5040 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec IRFU430APBF-VB | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 2.1Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 9W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 4.5A | |
| Ciss-Input Capacitance | - | |
| Gate Charge(Qg) | 48nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4616 | $ 0.4616 |
| 10+ | $0.3658 | $ 3.6580 |
| 30+ | $0.3239 | $ 9.7170 |
| 80+ | $0.2727 | $ 21.8160 |
| 480+ | $0.2497 | $ 119.8560 |
| 960+ | $0.2349 | $ 225.5040 |
