15% off
| Manufacturer | |
| Mfr. Part # | IRF8010SPBF-VB |
| EBEE Part # | E85878811 |
| Package | TO-263 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 120A 3.75W 4V@250uA 1 N-channel TO-263 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.9474 | $ 0.9474 |
| 10+ | $0.7899 | $ 7.8990 |
| 50+ | $0.7038 | $ 35.1900 |
| 100+ | $0.6055 | $ 60.5500 |
| 500+ | $0.5625 | $ 281.2500 |
| 1000+ | $0.5437 | $ 543.7000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec IRF8010SPBF-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 10mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 265pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 250W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 6.55nF | |
| Output Capacitance(Coss) | 665pF | |
| Gate Charge(Qg) | 105nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.9474 | $ 0.9474 |
| 10+ | $0.7899 | $ 7.8990 |
| 50+ | $0.7038 | $ 35.1900 |
| 100+ | $0.6055 | $ 60.5500 |
| 500+ | $0.5625 | $ 281.2500 |
| 1000+ | $0.5437 | $ 543.7000 |
