| Manufacturer | |
| Mfr. Part # | IRF650PBF-VB |
| EBEE Part # | E820417667 |
| Package | TO-220AB |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 200V 35A 58mΩ@10V 1 N-channel TO-220 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.6947 | $ 1.6947 |
| 10+ | $1.4457 | $ 14.4570 |
| 50+ | $1.2899 | $ 64.4950 |
| 100+ | $1.1293 | $ 112.9300 |
| 500+ | $1.0570 | $ 528.5000 |
| 1000+ | $1.0265 | $ 1026.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec IRF650PBF-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 58mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 3.75W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 35A | |
| Ciss-Input Capacitance | 2.69nF | |
| Output Capacitance(Coss) | 200pF | |
| Gate Charge(Qg) | 140nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.6947 | $ 1.6947 |
| 10+ | $1.4457 | $ 14.4570 |
| 50+ | $1.2899 | $ 64.4950 |
| 100+ | $1.1293 | $ 112.9300 |
| 500+ | $1.0570 | $ 528.5000 |
| 1000+ | $1.0265 | $ 1026.5000 |
