| Manufacturer | |
| Mfr. Part # | IPD90N10S4L-06-VB |
| EBEE Part # | E87568804 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 100A 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.6020 | $ 1.6020 |
| 10+ | $1.3242 | $ 13.2420 |
| 30+ | $1.1734 | $ 35.2020 |
| 100+ | $1.0003 | $ 100.0300 |
| 500+ | $0.9241 | $ 462.0500 |
| 1000+ | $0.8892 | $ 889.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec IPD90N10S4L-06-VB | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 5mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 3.85W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 2.8nF | |
| Output Capacitance(Coss) | 410pF | |
| Gate Charge(Qg) | 90nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.6020 | $ 1.6020 |
| 10+ | $1.3242 | $ 13.2420 |
| 30+ | $1.1734 | $ 35.2020 |
| 100+ | $1.0003 | $ 100.0300 |
| 500+ | $0.9241 | $ 462.0500 |
| 1000+ | $0.8892 | $ 889.2000 |
