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VBsemi Elec HY3210B-VB
| Manufacturer | |
| Mfr. Part # | HY3210B-VB |
| EBEE Part # | E819188104 |
| Package | TO-263(D2PAK) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 1 N-channel TO-263-2L MOSFETs ROHS |
This materials supports customized cables!
Learn more >>143 In Stock for Fast Shipping
143 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.2019 | $ 1.2019 |
| 10+ | $1.0178 | $ 10.1780 |
| 30+ | $0.9146 | $ 27.4380 |
| 100+ | $0.7256 | $ 72.5600 |
| 500+ | $0.6748 | $ 337.4000 |
| 1000+ | $0.6510 | $ 651.0000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec HY3210B-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 10mΩ@10V;23mΩ@4.5V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 265pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 250W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 6.55nF | |
| Output Capacitance(Coss) | 665pF | |
| Gate Charge(Qg) | 105nC@10V |
Shopping Guide
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143 Stock for Shipping Fast
143 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.2019 | $ 1.2019 |
| 10+ | $1.0178 | $ 10.1780 |
| 30+ | $0.9146 | $ 27.4380 |
| 100+ | $0.7256 | $ 72.5600 |
| 500+ | $0.6748 | $ 337.4000 |
| 1000+ | $0.6510 | $ 651.0000 |
Best price for more quantity?
$
