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VBsemi Elec HFD4N50-VB
| Manufacturer | |
| Mfr. Part # | HFD4N50-VB |
| EBEE Part # | E83040280 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 4.5A 60W 2.1Ω@10V,3.1A 2.5V@250uA 1 N-channel TO-252 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>2376 In Stock for Fast Shipping
2376 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.3364 | $ 0.3364 |
| 10+ | $0.2961 | $ 2.9610 |
| 30+ | $0.2786 | $ 8.3580 |
| 100+ | $0.2570 | $ 25.7000 |
| 500+ | $0.2476 | $ 123.8000 |
| 1000+ | $0.2423 | $ 242.3000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec HFD4N50-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 2.1Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 60W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 4.5A | |
| Ciss-Input Capacitance | 1.417nF | |
| Output Capacitance(Coss) | 177pF | |
| Gate Charge(Qg) | 48nC@10V |
Shopping Guide
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2376 Stock for Shipping Fast
2376 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.3364 | $ 0.3364 |
| 10+ | $0.2961 | $ 2.9610 |
| 30+ | $0.2786 | $ 8.3580 |
| 100+ | $0.2570 | $ 25.7000 |
| 500+ | $0.2476 | $ 123.8000 |
| 1000+ | $0.2423 | $ 242.3000 |
Best price for more quantity?
$
