| Manufacturer | |
| Mfr. Part # | HAT2195WP-VB |
| EBEE Part # | E829779662 |
| Package | DFN5x6-8 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 30V 21A 35W 0.003Ω@10V,32A 2.5V@250uA DFN-8(5x6) MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7780 | $ 0.7780 |
| 10+ | $0.6272 | $ 6.2720 |
| 30+ | $0.5510 | $ 16.5300 |
| 100+ | $0.4764 | $ 47.6400 |
| 500+ | $0.4303 | $ 215.1500 |
| 1000+ | $0.4081 | $ 408.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec HAT2195WP-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 3mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF | |
| Pd - Power Dissipation | 210W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 120A | |
| Ciss-Input Capacitance | 3.2nF | |
| Output Capacitance(Coss) | 1.025nF | |
| Gate Charge(Qg) | 71nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.7780 | $ 0.7780 |
| 10+ | $0.6272 | $ 6.2720 |
| 30+ | $0.5510 | $ 16.5300 |
| 100+ | $0.4764 | $ 47.6400 |
| 500+ | $0.4303 | $ 215.1500 |
| 1000+ | $0.4081 | $ 408.1000 |
