15% off
| Manufacturer | |
| Mfr. Part # | H5N2005DSTL-E-VB |
| EBEE Part # | E819190213 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 200V 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6021 | $ 0.6021 |
| 10+ | $0.4902 | $ 4.9020 |
| 30+ | $0.4328 | $ 12.9840 |
| 100+ | $0.3769 | $ 37.6900 |
| 500+ | $0.3441 | $ 172.0500 |
| 1000+ | $0.3263 | $ 326.3000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec H5N2005DSTL-E-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 245mΩ@10V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 96W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 1.8nF | |
| Output Capacitance(Coss) | 180pF | |
| Gate Charge(Qg) | 51nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6021 | $ 0.6021 |
| 10+ | $0.4902 | $ 4.9020 |
| 30+ | $0.4328 | $ 12.9840 |
| 100+ | $0.3769 | $ 37.6900 |
| 500+ | $0.3441 | $ 172.0500 |
| 1000+ | $0.3263 | $ 326.3000 |
