15% off
| Manufacturer | |
| Mfr. Part # | FDP047N08-VB |
| EBEE Part # | E820755495 |
| Package | TO-220AB |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 80V 195A 2.8mΩ@10V 1 N-channel TO-220 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.2916 | $ 1.2916 |
| 10+ | $1.0783 | $ 10.7830 |
| 50+ | $0.9609 | $ 48.0450 |
| 100+ | $0.8273 | $ 82.7300 |
| 500+ | $0.7679 | $ 383.9500 |
| 1000+ | $0.7409 | $ 740.9000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec FDP047N08-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 3mΩ@7.5V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 348pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 375W | |
| Drain to Source Voltage | 80V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 195A | |
| Ciss-Input Capacitance | 7.91nF | |
| Output Capacitance(Coss) | 3.25nF | |
| Gate Charge(Qg) | 141nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.2916 | $ 1.2916 |
| 10+ | $1.0783 | $ 10.7830 |
| 50+ | $0.9609 | $ 48.0450 |
| 100+ | $0.8273 | $ 82.7300 |
| 500+ | $0.7679 | $ 383.9500 |
| 1000+ | $0.7409 | $ 740.9000 |
