| Manufacturer | |
| Mfr. Part # | FDMS86105-VB |
| EBEE Part # | E820417547 |
| Package | DFN5x6-8 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 65A 8.7mΩ@10V 1 N-channel DFN-8L(5x6) MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.1855 | $ 1.1855 |
| 10+ | $0.9797 | $ 9.7970 |
| 30+ | $0.8683 | $ 26.0490 |
| 100+ | $0.7398 | $ 73.9800 |
| 500+ | $0.6841 | $ 342.0500 |
| 1000+ | $0.6578 | $ 657.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec FDMS86105-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 9mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 11.2pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 80W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 65A | |
| Ciss-Input Capacitance | 3.97nF | |
| Output Capacitance(Coss) | 132pF | |
| Gate Charge(Qg) | 11.2nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.1855 | $ 1.1855 |
| 10+ | $0.9797 | $ 9.7970 |
| 30+ | $0.8683 | $ 26.0490 |
| 100+ | $0.7398 | $ 73.9800 |
| 500+ | $0.6841 | $ 342.0500 |
| 1000+ | $0.6578 | $ 657.8000 |
