| Manufacturer | |
| Mfr. Part # | FDD6760A-VB |
| EBEE Part # | E829778966 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 30V 35.8A 3.75W 0.002Ω@10V,38.8A 1.5V@250uA TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5716 | $ 0.5716 |
| 10+ | $0.4605 | $ 4.6050 |
| 30+ | $0.4049 | $ 12.1470 |
| 100+ | $0.3493 | $ 34.9300 |
| 500+ | $0.3160 | $ 158.0000 |
| 1000+ | $0.2985 | $ 298.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec FDD6760A-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 3mΩ@4.5V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 770pF | |
| Pd - Power Dissipation | 3.75W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 5.201nF | |
| Output Capacitance(Coss) | 1.525nF | |
| Gate Charge(Qg) | 72nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5716 | $ 0.5716 |
| 10+ | $0.4605 | $ 4.6050 |
| 30+ | $0.4049 | $ 12.1470 |
| 100+ | $0.3493 | $ 34.9300 |
| 500+ | $0.3160 | $ 158.0000 |
| 1000+ | $0.2985 | $ 298.5000 |
