15% off
| Manufacturer | |
| Mfr. Part # | FDC855N-VB |
| EBEE Part # | E820626330 |
| Package | TSOP-6 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 30V 6A 23mΩ@10V 1 N-channel SOT-23-6 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1869 | $ 0.9345 |
| 50+ | $0.1467 | $ 7.3350 |
| 150+ | $0.1295 | $ 19.4250 |
| 500+ | $0.1081 | $ 54.0500 |
| 3000+ | $0.0985 | $ 295.5000 |
| 6000+ | $0.0928 | $ 556.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec FDC855N-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 27mΩ@4.5V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.3W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Current - Continuous Drain(Id) | 9A | |
| Ciss-Input Capacitance | 424pF | |
| Output Capacitance(Coss) | 100pF | |
| Gate Charge(Qg) | 13nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1869 | $ 0.9345 |
| 50+ | $0.1467 | $ 7.3350 |
| 150+ | $0.1295 | $ 19.4250 |
| 500+ | $0.1081 | $ 54.0500 |
| 3000+ | $0.0985 | $ 295.5000 |
| 6000+ | $0.0928 | $ 556.8000 |
