| Manufacturer | |
| Mfr. Part # | CSD19503KCS-VB |
| EBEE Part # | E87569107 |
| Package | TO-220AB |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 80V 7mΩ@10V 2.7V 1 N-channel TO-220 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.1309 | $ 1.1309 |
| 10+ | $0.9429 | $ 9.4290 |
| 50+ | $0.8401 | $ 42.0050 |
| 100+ | $0.7229 | $ 72.2900 |
| 500+ | $0.6715 | $ 335.7500 |
| 1000+ | $0.6490 | $ 649.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec CSD19503KCS-VB | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 7mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 376pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 180W | |
| Drain to Source Voltage | 80V | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 3.855nF | |
| Output Capacitance(Coss) | 1.12nF | |
| Gate Charge(Qg) | 35.5nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.1309 | $ 1.1309 |
| 10+ | $0.9429 | $ 9.4290 |
| 50+ | $0.8401 | $ 42.0050 |
| 100+ | $0.7229 | $ 72.2900 |
| 500+ | $0.6715 | $ 335.7500 |
| 1000+ | $0.6490 | $ 649.0000 |
