15% off
| Manufacturer | |
| Mfr. Part # | CEB6601-VB |
| EBEE Part # | E8879039 |
| Package | TO-263(D2PAK) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 60V 35A 48mΩ@10V,35A 1 Piece P-Channel TO-263-2 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.8098 | $ 0.8098 |
| 10+ | $0.6576 | $ 6.5760 |
| 50+ | $0.5823 | $ 29.1150 |
| 100+ | $0.5069 | $ 50.6900 |
| 500+ | $0.4618 | $ 230.9000 |
| 1000+ | $0.4394 | $ 439.4000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VBsemi Elec CEB6601-VB | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 48mΩ@10V | |
| Operating Temperature - | -55℃~+100℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | - | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 35A | |
| Ciss-Input Capacitance | 1.65nF | |
| Output Capacitance(Coss) | 200pF | |
| Gate Charge(Qg) | 67nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.8098 | $ 0.8098 |
| 10+ | $0.6576 | $ 6.5760 |
| 50+ | $0.5823 | $ 29.1150 |
| 100+ | $0.5069 | $ 50.6900 |
| 500+ | $0.4618 | $ 230.9000 |
| 1000+ | $0.4394 | $ 439.4000 |
