| Manufacturer | |
| Mfr. Part # | SI2309A |
| EBEE Part # | E82681220 |
| Package | SOT-23 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 60V 1.25A 340mΩ@10V 1.25W 1V@250uA 1 N-Channel SOT-23 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.0422 | $ 0.4220 |
| 100+ | $0.0333 | $ 3.3300 |
| 300+ | $0.0288 | $ 8.6400 |
| 3000+ | $0.0237 | $ 71.1000 |
| 6000+ | $0.0210 | $ 126.0000 |
| 9000+ | $0.0196 | $ 176.4000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | UMW(Youtai Semiconductor Co., Ltd.) SI2309A | |
| RoHS | ||
| Type | P-Channel | |
| Configuration | - | |
| RDS(on) | 340mΩ@10V;550mΩ@4.5V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.25W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 1.25A | |
| Ciss-Input Capacitance | - | |
| Gate Charge(Qg) | 5.4nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.0422 | $ 0.4220 |
| 100+ | $0.0333 | $ 3.3300 |
| 300+ | $0.0288 | $ 8.6400 |
| 3000+ | $0.0237 | $ 71.1000 |
| 6000+ | $0.0210 | $ 126.0000 |
| 9000+ | $0.0196 | $ 176.4000 |
