| Manufacturer | |
| Mfr. Part # | P1006BD |
| EBEE Part # | E83034551 |
| Package | TO-252-2 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 60V 66A 96W 10mΩ@10V,20A 1.3V@250uA 1 N-channel TO-252-2 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4155 | $ 0.4155 |
| 10+ | $0.3197 | $ 3.1970 |
| 30+ | $0.2800 | $ 8.4000 |
| 100+ | $0.2276 | $ 22.7600 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | U-NIKC P1006BD | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 60V | |
| Continuous Drain Current (Id) | 66A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 10mΩ@10V,20A | |
| Power Dissipation (Pd) | 96W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.3V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF@25V | |
| Input Capacitance (Ciss@Vds) | 1.92nF@25V | |
| Total Gate Charge (Qg@Vgs) | 42nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4155 | $ 0.4155 |
| 10+ | $0.3197 | $ 3.1970 |
| 30+ | $0.2800 | $ 8.4000 |
| 100+ | $0.2276 | $ 22.7600 |
