| Manufacturer | |
| Mfr. Part # | TSU5N65M |
| EBEE Part # | E8475511 |
| Package | TO-251 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 650V 3A 58W 3.27Ω@10V,1.5A 4V@250uA 1 N-channel TO-251 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2438 | $ 1.2190 |
| 50+ | $0.1999 | $ 9.9950 |
| 160+ | $0.1624 | $ 25.9840 |
| 480+ | $0.1388 | $ 66.6240 |
| 2480+ | $0.1283 | $ 318.1840 |
| 4000+ | $0.1221 | $ 488.4000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | Truesemi TSU5N65M | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 3A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.27Ω@10V,1.5A | |
| Power Dissipation (Pd) | 58W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF@25V | |
| Input Capacitance (Ciss@Vds) | 560pF@25V | |
| Total Gate Charge (Qg@Vgs) | 16nC@480V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2438 | $ 1.2190 |
| 50+ | $0.1999 | $ 9.9950 |
| 160+ | $0.1624 | $ 25.9840 |
| 480+ | $0.1388 | $ 66.6240 |
| 2480+ | $0.1283 | $ 318.1840 |
| 4000+ | $0.1221 | $ 488.4000 |
