| Manufacturer | |
| Mfr. Part # | TSD5N60M |
| EBEE Part # | E8382368 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | None |
| Description | 600V 4.5A 2.5Ω@10V,2.25A 48W 5V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2317 | $ 1.1585 |
| 50+ | $0.1876 | $ 9.3800 |
| 150+ | $0.1686 | $ 25.2900 |
| 500+ | $0.1450 | $ 72.5000 |
| 2500+ | $0.1178 | $ 294.5000 |
| 5000+ | $0.1114 | $ 557.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | Truesemi TSD5N60M | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 600V | |
| Continuous Drain Current (Id) | 4.5A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.5Ω@10V,2.25A | |
| Power Dissipation (Pd) | 48W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF@25V | |
| Input Capacitance (Ciss@Vds) | 560pF@25V | |
| Total Gate Charge (Qg@Vgs) | 12nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2317 | $ 1.1585 |
| 50+ | $0.1876 | $ 9.3800 |
| 150+ | $0.1686 | $ 25.2900 |
| 500+ | $0.1450 | $ 72.5000 |
| 2500+ | $0.1178 | $ 294.5000 |
| 5000+ | $0.1114 | $ 557.0000 |
