| Manufacturer | |
| Mfr. Part # | FQD7P20TM |
| EBEE Part # | E85250729 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 200V 10A 35W 900mΩ@10V,5A 4V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4485 | $ 0.4485 |
| 10+ | $0.3585 | $ 3.5850 |
| 30+ | $0.3213 | $ 9.6390 |
| 100+ | $0.2732 | $ 27.3200 |
| 500+ | $0.2142 | $ 107.1000 |
| 1000+ | $0.2002 | $ 200.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | Tokmas FQD7P20TM | |
| RoHS | ||
| RDS(on) | 900mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 35W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 960pF | |
| Output Capacitance(Coss) | 180pF | |
| Gate Charge(Qg) | 36nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.4485 | $ 0.4485 |
| 10+ | $0.3585 | $ 3.5850 |
| 30+ | $0.3213 | $ 9.6390 |
| 100+ | $0.2732 | $ 27.3200 |
| 500+ | $0.2142 | $ 107.1000 |
| 1000+ | $0.2002 | $ 200.2000 |
