| Manufacturer | |
| Mfr. Part # | FQD2N100TM |
| EBEE Part # | E85250728 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 1kV 2A 85W 7.8Ω@10V,1A 2V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6415 | $ 0.6415 |
| 10+ | $0.5319 | $ 5.3190 |
| 30+ | $0.4764 | $ 14.2920 |
| 100+ | $0.4224 | $ 42.2400 |
| 500+ | $0.3414 | $ 170.7000 |
| 1000+ | $0.3239 | $ 323.9000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | Tokmas FQD2N100TM | |
| RoHS | ||
| RDS(on) | 7.8Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 85W | |
| Drain to Source Voltage | 1kV | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 2A | |
| Ciss-Input Capacitance | 380pF | |
| Gate Charge(Qg) | 15nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6415 | $ 0.6415 |
| 10+ | $0.5319 | $ 5.3190 |
| 30+ | $0.4764 | $ 14.2920 |
| 100+ | $0.4224 | $ 42.2400 |
| 500+ | $0.3414 | $ 170.7000 |
| 1000+ | $0.3239 | $ 323.9000 |
