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Texas Instruments TPS1101DR
| Manufacturer | |
| Mfr. Part # | TPS1101DR |
| EBEE Part # | E82861045 |
| Package | SOIC-8 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 15V 2.3A 791mW 90mΩ@10V,2.5A 1.5V@250uA 1 Piece P-Channel SOIC-8 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.5772 | $ 1.5772 |
| 200+ | $0.6109 | $ 122.1800 |
| 500+ | $0.5890 | $ 294.5000 |
| 1000+ | $0.5780 | $ 578.0000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | TI TPS1101DR | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Type | 1 Piece P-Channel | |
| Drain Source Voltage (Vdss) | 15V | |
| Continuous Drain Current (Id) | 2.3A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 90mΩ@10V,2.5A | |
| Power Dissipation (Pd) | 791mW | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.5V@250uA | |
| Total Gate Charge (Qg@Vgs) | 11.25nC@10V |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.5772 | $ 1.5772 |
| 200+ | $0.6109 | $ 122.1800 |
| 500+ | $0.5890 | $ 294.5000 |
| 1000+ | $0.5780 | $ 578.0000 |
