| Manufacturer | |
| Mfr. Part # | TPS1100DR |
| EBEE Part # | E844653 |
| Package | SOIC-8 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 15V 1A 700mΩ@3V,0.2A 791mW 1.5V@250uA 1 Piece P-Channel SOIC-8 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.4247 | $ 1.4247 |
| 10+ | $1.2004 | $ 12.0040 |
| 30+ | $1.0756 | $ 32.2680 |
| 100+ | $0.9366 | $ 93.6600 |
| 500+ | $0.7866 | $ 393.3000 |
| 1000+ | $0.7582 | $ 758.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | TI TPS1100DR | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 180mΩ@10V | |
| Operating Temperature - | -40℃~+125℃ | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 791mW | |
| Drain to Source Voltage | 15V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Current - Continuous Drain(Id) | 1.6A | |
| Gate Charge(Qg) | 5.45nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.4247 | $ 1.4247 |
| 10+ | $1.2004 | $ 12.0040 |
| 30+ | $1.0756 | $ 32.2680 |
| 100+ | $0.9366 | $ 93.6600 |
| 500+ | $0.7866 | $ 393.3000 |
| 1000+ | $0.7582 | $ 758.2000 |
