| Manufacturer | |
| Mfr. Part # | CSD19536KCS |
| EBEE Part # | E8206030 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 150A 2.7mΩ@10V,100A 375W 3.2V@250uA 1 N-channel TO-220 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.2945 | $ 3.2945 |
| 10+ | $2.8656 | $ 28.6560 |
| 30+ | $2.5985 | $ 77.9550 |
| 100+ | $2.3228 | $ 232.2800 |
| 500+ | $2.1981 | $ 1099.0500 |
| 1000+ | $2.1448 | $ 2144.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | TI CSD19536KCS | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 150A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.7mΩ@10V,100A | |
| Power Dissipation (Pd) | 375W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.2V@250uA | |
| Input Capacitance (Ciss@Vds) | 12nF@50V | |
| Total Gate Charge (Qg@Vgs) | 153nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.2945 | $ 3.2945 |
| 10+ | $2.8656 | $ 28.6560 |
| 30+ | $2.5985 | $ 77.9550 |
| 100+ | $2.3228 | $ 232.2800 |
| 500+ | $2.1981 | $ 1099.0500 |
| 1000+ | $2.1448 | $ 2144.8000 |
