| Manufacturer | |
| Mfr. Part # | CSD19532KTT |
| EBEE Part # | E82872325 |
| Package | TO-263-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 200A 250W 4.6mΩ@10V,90A 2.6V@250uA 1 N-channel TO-263-3 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.2907 | $ 3.2907 |
| 10+ | $3.2148 | $ 32.1480 |
| 30+ | $3.1625 | $ 94.8750 |
| 100+ | $3.1119 | $ 311.1900 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | TI CSD19532KTT | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 200A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.6mΩ@10V,90A | |
| Power Dissipation (Pd) | 250W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.6V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF@50V | |
| Input Capacitance (Ciss@Vds) | 5.06nF@50V | |
| Total Gate Charge (Qg@Vgs) | 44nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.2907 | $ 3.2907 |
| 10+ | $3.2148 | $ 32.1480 |
| 30+ | $3.1625 | $ 94.8750 |
| 100+ | $3.1119 | $ 311.1900 |
