| Manufacturer | |
| Mfr. Part # | CSD19531KCS |
| EBEE Part # | E82862209 |
| Package | TO-220AB-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 100V 110A 6.4mΩ@10V,60A 214W 2.7V@250uA 1 N-channel TO-220AB-3 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.7332 | $ 2.7332 |
| 200+ | $1.0575 | $ 211.5000 |
| 500+ | $1.0211 | $ 510.5500 |
| 1000+ | $1.0029 | $ 1002.9000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | TI CSD19531KCS | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 110A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 6.4mΩ@10V,60A | |
| Power Dissipation (Pd) | 214W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.7V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF@50V | |
| Input Capacitance (Ciss@Vds) | 3.87nF@50V | |
| Total Gate Charge (Qg@Vgs) | 49nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.7332 | $ 2.7332 |
| 200+ | $1.0575 | $ 211.5000 |
| 500+ | $1.0211 | $ 510.5500 |
| 1000+ | $1.0029 | $ 1002.9000 |
