| Manufacturer | |
| Mfr. Part # | TDM3536 |
| EBEE Part # | E8380224 |
| Package | PPAK-8(3x3) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 30V 46A 4.2mΩ@10V,12A 31.3W 2.5V@250uA 1 N-channel PPAK-8(3x3) MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.3603 | $ 1.8015 |
| 50+ | $0.2923 | $ 14.6150 |
| 150+ | $0.2632 | $ 39.4800 |
| 500+ | $0.2268 | $ 113.4000 |
| 3000+ | $0.2106 | $ 631.8000 |
| 6000+ | $0.2009 | $ 1205.4000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | Techcode TDM3536 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 6.5mΩ@4.5V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 31.3W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 70A | |
| Ciss-Input Capacitance | 1.35nF | |
| Output Capacitance(Coss) | 900pF | |
| Gate Charge(Qg) | 8.8nC@15V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.3603 | $ 1.8015 |
| 50+ | $0.2923 | $ 14.6150 |
| 150+ | $0.2632 | $ 39.4800 |
| 500+ | $0.2268 | $ 113.4000 |
| 3000+ | $0.2106 | $ 631.8000 |
| 6000+ | $0.2009 | $ 1205.4000 |
