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TECH PUBLIC TPM2009EP3
| Manufacturer | |
| Mfr. Part # | TPM2009EP3 |
| EBEE Part # | E82844728 |
| Package | DFN1006-3L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 20V 660mA 700mΩ@2.5V,0.8A 100mW 1.1V@250uA 1 Piece P-Channel DFN1006-3L MOSFETs ROHS |
This materials supports customized cables!
Learn more >>39640 In Stock for Fast Shipping
39640 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 20+ | $0.0393 | $ 0.7860 |
| 200+ | $0.0316 | $ 6.3200 |
| 600+ | $0.0277 | $ 16.6200 |
| 2000+ | $0.0249 | $ 49.8000 |
| 10000+ | $0.0200 | $ 200.0000 |
| 20000+ | $0.0188 | $ 376.0000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | TECH PUBLIC TPM2009EP3 | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 950mΩ@1.8V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 100mW | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Current - Continuous Drain(Id) | 660mA | |
| Ciss-Input Capacitance | 170pF | |
| Output Capacitance(Coss) | 25pF | |
| Gate Charge(Qg) | - |
Shopping Guide
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39640 Stock for Shipping Fast
39640 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 20+ | $0.0393 | $ 0.7860 |
| 200+ | $0.0316 | $ 6.3200 |
| 600+ | $0.0277 | $ 16.6200 |
| 2000+ | $0.0249 | $ 49.8000 |
| 10000+ | $0.0200 | $ 200.0000 |
| 20000+ | $0.0188 | $ 376.0000 |
Best price for more quantity?
$
