| Manufacturer | |
| Mfr. Part # | STY112N65M5 |
| EBEE Part # | E82965377 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 96A 19mΩ@10V,48A 625W 2.1V@250uA TO-247-3 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $106.6637 | $ 106.6637 |
| 200+ | $41.2773 | $ 8255.4600 |
| 500+ | $39.8277 | $ 19913.8500 |
| 1000+ | $39.1112 | $ 39111.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STY112N65M5 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 96A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 19mΩ@10V,48A | |
| Power Dissipation (Pd) | 625W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.1V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF@100V | |
| Input Capacitance (Ciss@Vds) | 16870pF | |
| Total Gate Charge (Qg@Vgs) | 350nC |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $106.6637 | $ 106.6637 |
| 200+ | $41.2773 | $ 8255.4600 |
| 500+ | $39.8277 | $ 19913.8500 |
| 1000+ | $39.1112 | $ 39111.2000 |
