| Manufacturer | |
| Mfr. Part # | STW70N65DM6-4 |
| EBEE Part # | E83281101 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 68A 36mΩ@10V,34A 450W 3.25V@250uA 1 N-channel TO-247-4 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $25.0063 | $ 25.0063 |
| 200+ | $9.6781 | $ 1935.6200 |
| 500+ | $9.3371 | $ 4668.5500 |
| 1000+ | $9.1693 | $ 9169.3000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STW70N65DM6-4 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 68A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 36mΩ@10V,34A | |
| Power Dissipation (Pd) | 450W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.25V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF@100V | |
| Input Capacitance (Ciss@Vds) | 4.9nF@100V | |
| Total Gate Charge (Qg@Vgs) | 125nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $25.0063 | $ 25.0063 |
| 200+ | $9.6781 | $ 1935.6200 |
| 500+ | $9.3371 | $ 4668.5500 |
| 1000+ | $9.1693 | $ 9169.3000 |
