| Manufacturer | |
| Mfr. Part # | STW56N65DM2 |
| EBEE Part # | E8165942 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 48A 65mΩ@10V,24A 360W 5V@250uA 1 N-channel TO-247-3 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.6520 | $ 7.6520 |
| 10+ | $6.8409 | $ 68.4090 |
| 30+ | $6.3457 | $ 190.3710 |
| 90+ | $5.9303 | $ 533.7270 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STW56N65DM2 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 48A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 65mΩ@10V,24A | |
| Power Dissipation (Pd) | 360W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA | |
| Input Capacitance (Ciss@Vds) | 4.1nF@100V | |
| Total Gate Charge (Qg@Vgs) | 88nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.6520 | $ 7.6520 |
| 10+ | $6.8409 | $ 68.4090 |
| 30+ | $6.3457 | $ 190.3710 |
| 90+ | $5.9303 | $ 533.7270 |
