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STMicroelectronics STW24N60DM2
| Manufacturer | |
| Mfr. Part # | STW24N60DM2 |
| EBEE Part # | E8495251 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 600V 18A 150W 0.175Ω@10V,9A 4V@250uA 1 N-channel TO-247-3 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.4305 | $ 4.4305 |
| 10+ | $3.8891 | $ 38.8910 |
| 30+ | $3.5660 | $ 106.9800 |
| 100+ | $3.2394 | $ 323.9400 |
| 500+ | $3.0886 | $ 1544.3000 |
| 1000+ | $3.0211 | $ 3021.1000 |
| 2000+ | $2.9856 | $ 5971.2000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STW24N60DM2 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 600V | |
| Continuous Drain Current (Id) | 18A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.175Ω@10V,9A | |
| Power Dissipation (Pd) | 150W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.4pF@100V | |
| Input Capacitance (Ciss@Vds) | 1.055nF@100V | |
| Total Gate Charge (Qg@Vgs) | 29nC@480V |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.4305 | $ 4.4305 |
| 10+ | $3.8891 | $ 38.8910 |
| 30+ | $3.5660 | $ 106.9800 |
| 100+ | $3.2394 | $ 323.9400 |
| 500+ | $3.0886 | $ 1544.3000 |
| 1000+ | $3.0211 | $ 3021.1000 |
| 2000+ | $2.9856 | $ 5971.2000 |
