| Manufacturer | |
| Mfr. Part # | STS8DN6LF6AG |
| EBEE Part # | E8155609 |
| Package | SOIC-8 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 60V 8A 24mΩ@10V,4A 3.2W 2.5V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.1201 | $ 1.1201 |
| 10+ | $0.9320 | $ 9.3200 |
| 30+ | $0.8396 | $ 25.1880 |
| 100+ | $0.7455 | $ 74.5500 |
| 500+ | $0.6906 | $ 345.3000 |
| 1000+ | $0.6603 | $ 660.3000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,FET, MOSFET Arrays | |
| Datasheet | ST STS8DN6LF6AG | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Type | 2 N-Channel | |
| Drain Source Voltage (Vdss) | 60V | |
| Continuous Drain Current (Id) | 8A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 24mΩ@10V,4A | |
| Power Dissipation (Pd) | 3.2W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA | |
| Input Capacitance (Ciss@Vds) | 1.34nF@25V | |
| Total Gate Charge (Qg@Vgs) | 27nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.1201 | $ 1.1201 |
| 10+ | $0.9320 | $ 9.3200 |
| 30+ | $0.8396 | $ 25.1880 |
| 100+ | $0.7455 | $ 74.5500 |
| 500+ | $0.6906 | $ 345.3000 |
| 1000+ | $0.6603 | $ 660.3000 |
