| Manufacturer | |
| Mfr. Part # | STP6N65M2 |
| EBEE Part # | E87089892 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 4A 60W 4V@250uA 1 N-channel TO-220 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.5197 | $ 1.5197 |
| 200+ | $0.6065 | $ 121.3000 |
| 500+ | $0.5856 | $ 292.8000 |
| 1000+ | $0.5768 | $ 576.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STP6N65M2 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 4A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | - | |
| Power Dissipation (Pd) | 60W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.65pF@100V | |
| Input Capacitance (Ciss@Vds) | 226pF@100V | |
| Total Gate Charge (Qg@Vgs) | 9.8nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.5197 | $ 1.5197 |
| 200+ | $0.6065 | $ 121.3000 |
| 500+ | $0.5856 | $ 292.8000 |
| 1000+ | $0.5768 | $ 576.8000 |
