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STMicroelectronics STP36N55M5
| Manufacturer | |
| Mfr. Part # | STP36N55M5 |
| EBEE Part # | E8501035 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 600V 33A 0.08Ω@10V,16.5A 190W 4V@250uA 1 N-channel TO-220 MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.4674 | $ 7.4674 |
| 10+ | $6.6296 | $ 66.2960 |
| 50+ | $6.1166 | $ 305.8300 |
| 100+ | $5.6889 | $ 568.8900 |
| 500+ | $5.6233 | $ 2811.6500 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STP36N55M5 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 600V | |
| Continuous Drain Current (Id) | 33A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.08Ω@10V,16.5A | |
| Power Dissipation (Pd) | 190W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.6pF@100V | |
| Input Capacitance (Ciss@Vds) | 2.67nF@100V | |
| Total Gate Charge (Qg@Vgs) | 62nC@10V |
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.4674 | $ 7.4674 |
| 10+ | $6.6296 | $ 66.2960 |
| 50+ | $6.1166 | $ 305.8300 |
| 100+ | $5.6889 | $ 568.8900 |
| 500+ | $5.6233 | $ 2811.6500 |
