| Manufacturer | |
| Mfr. Part # | STP35N60DM2 |
| EBEE Part # | E83002265 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 600V 28A 0.11Ω@10V,14A 210W 3V@250uA 1 N-channel TO-220 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.9945 | $ 3.9945 |
| 10+ | $3.4594 | $ 34.5940 |
| 50+ | $3.0218 | $ 151.0900 |
| 100+ | $2.7001 | $ 270.0100 |
| 500+ | $2.5517 | $ 1275.8500 |
| 1000+ | $2.4836 | $ 2483.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STP35N60DM2 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 110mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 210W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 28A | |
| Ciss-Input Capacitance | 2.4nF | |
| Gate Charge(Qg) | 54nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.9945 | $ 3.9945 |
| 10+ | $3.4594 | $ 34.5940 |
| 50+ | $3.0218 | $ 151.0900 |
| 100+ | $2.7001 | $ 270.0100 |
| 500+ | $2.5517 | $ 1275.8500 |
| 1000+ | $2.4836 | $ 2483.6000 |
