| Manufacturer | |
| Mfr. Part # | STP33N60DM6 |
| EBEE Part # | E8501033 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 600V 128mΩ@10V,12.5A 190W 1 N-channel TO-220 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.7217 | $ 2.7217 |
| 10+ | $2.2941 | $ 22.9410 |
| 30+ | $2.0270 | $ 60.8100 |
| 100+ | $1.7522 | $ 175.2200 |
| 500+ | $1.6287 | $ 814.3500 |
| 1000+ | $1.5762 | $ 1576.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STP33N60DM6 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 128mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 190W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 25A | |
| Ciss-Input Capacitance | 1.5nF | |
| Output Capacitance(Coss) | 115pF | |
| Gate Charge(Qg) | 35nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.7217 | $ 2.7217 |
| 10+ | $2.2941 | $ 22.9410 |
| 30+ | $2.0270 | $ 60.8100 |
| 100+ | $1.7522 | $ 175.2200 |
| 500+ | $1.6287 | $ 814.3500 |
| 1000+ | $1.5762 | $ 1576.2000 |
