| Manufacturer | |
| Mfr. Part # | STP26N60M2 |
| EBEE Part # | E8501030 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 600V 20A 140mΩ@10V,10A 169W 3V@250uA 1 N-channel TO-220 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.1744 | $ 2.1744 |
| 10+ | $1.9029 | $ 19.0290 |
| 30+ | $1.7325 | $ 51.9750 |
| 100+ | $1.5585 | $ 155.8500 |
| 500+ | $1.4787 | $ 739.3500 |
| 1000+ | $1.4449 | $ 1444.9000 |
| 2000+ | $1.4289 | $ 2857.8000 |
| 4000+ | $1.4183 | $ 5673.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STP26N60M2 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 600V | |
| Continuous Drain Current (Id) | 20A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 140mΩ@10V,10A | |
| Power Dissipation (Pd) | 169W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF@100V | |
| Input Capacitance (Ciss@Vds) | 1.36nF@100V | |
| Total Gate Charge (Qg@Vgs) | 34nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.1744 | $ 2.1744 |
| 10+ | $1.9029 | $ 19.0290 |
| 30+ | $1.7325 | $ 51.9750 |
| 100+ | $1.5585 | $ 155.8500 |
| 500+ | $1.4787 | $ 739.3500 |
| 1000+ | $1.4449 | $ 1444.9000 |
| 2000+ | $1.4289 | $ 2857.8000 |
| 4000+ | $1.4183 | $ 5673.2000 |
