| Manufacturer | |
| Mfr. Part # | STP26N60DM6 |
| EBEE Part # | E82969959 |
| Package | TO-220-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 600V 18A 195mΩ@10V,9A 130W 4.75V@250uA 1 N-channel TO-220-3 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.5683 | $ 5.5683 |
| 350+ | $2.1552 | $ 754.3200 |
| 700+ | $2.0805 | $ 1456.3500 |
| 1050+ | $2.0422 | $ 2144.3100 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STP26N60DM6 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 600V | |
| Continuous Drain Current (Id) | 18A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 195mΩ@10V,9A | |
| Power Dissipation (Pd) | 130W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4.75V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Input Capacitance (Ciss@Vds) | 940pF@100V | |
| Total Gate Charge (Qg@Vgs) | 24nC |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.5683 | $ 5.5683 |
| 350+ | $2.1552 | $ 754.3200 |
| 700+ | $2.0805 | $ 1456.3500 |
| 1050+ | $2.0422 | $ 2144.3100 |
