| Manufacturer | |
| Mfr. Part # | STP10N62K3 |
| EBEE Part # | E87373285 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 620V 8.4A 750mΩ@10V,4A 125W 4.5V@100uA 1 N-channel TO-220 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.1783 | $ 4.1783 |
| 200+ | $1.6684 | $ 333.6800 |
| 500+ | $1.6118 | $ 805.9000 |
| 1000+ | $1.5845 | $ 1584.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | ST STP10N62K3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 620V | |
| Continuous Drain Current (Id) | 8.4A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 750mΩ@10V,4A | |
| Power Dissipation (Pd) | 125W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4.5V@100uA | |
| Input Capacitance (Ciss@Vds) | 1.25nF@50V | |
| Total Gate Charge (Qg@Vgs) | 42nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.1783 | $ 4.1783 |
| 200+ | $1.6684 | $ 333.6800 |
| 500+ | $1.6118 | $ 805.9000 |
| 1000+ | $1.5845 | $ 1584.5000 |
